Vertical channel heterostructure metal-insulator-semiconductor field-effect transistor (MESFET) device and fabrication method thereof
作者： Ke Huajie , Dong Zhihua , Zhou Tao , Zhang Peipei , Zhang Hui
DOI:
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摘要: The invention discloses a vertical channel heterostructure metal-insulator-semiconductor field-effect transistor (MESFET) device. MESFET device comprises an MES structure, source and drain, wherein the structure gate at least one semiconductor channel, axis of is basically perpendicular to selected plane, encircles electrically connected with drain through are arranged intervals along axial direction between drain. also fabrication method has advantages control capability, high working frequency, low process difficulty, finished rate like.
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