WSe2‐based Schottky junctions: The effect of polyiodide treatment on junction behavior

摘要: The effect of polyiodide solution treatment on WSe2−both n and p type−prior to Schottky junction formation, has been studied. junctions have characterized mainly by (photo)current/voltage spectral response measurements. Barrier heights ≳1 V found [Eg(WSe2)∼1.2 eV]. X‐ray photoelectron spectroscopy Rutherford backscattering analyses polyiodide‐treated WSe2 show that some iodine species (the nature which not conclusively identified) exists considerable depths (10−6–10−5 cm) in the WSe2, I uptake is much faster more extensive defects (∥c faces) than van der Waals (⊥ c) face, if indeed it adsorbed latter at all. Also, surface charge differs between two faces for both nontreated I‐treated cases. results are consistent with a passivation mechanism whereby chemically attack deposited metal (Au,Al), effectively removing metal/defect–semiconductor short ...