Tunnel gap structure and tunneling model of the anisotropic YBaCuO/I/Pb junctions
作者： I. Iguchi , Z. Wen
DOI: 10.1016/0921-4534(91)90150-W
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摘要: Abstract Measurements on the YBCO/I/Pb and YBCO/I/Au planar tunnel junctions (YBCO:YBA2Cu3O7−x, I: insulating barrier) with various artificial native barriers are reported. The an barrier of a few nm thick, grown by in situ deposition, exhibit YBCO Pb gap structures, zero bias anomaly (conductance peaking behavior around bias). These characteristics similar among (MgO, AlOx, Y2O3) used. On other hand, ex exposing film to ambient atmosphere structures proximity effect like conductance dip bias, consistent results reported previously groups. anisotropic values identified as Δab=16–20 meV ab-plane Δc∼5 along c-ax is. interpreted consistently terms model proposed taking contributions from both c-axis tunneling processes surface degradation films into account.
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