New Approach to the ALD of Bismuth Silicates; Bi(CH2SiMe3)3 Acting as a Precursor for both Bismuth and Silicon†
作者： J. Harjuoja , T. Hatanpää , M. Vehkamäki , S. Väyrynen , M. Putkonen
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摘要: Bismuth silicate thin films were deposited using atomic layer deposition (ALD) with a novel precursor, Bi(CH 2 SiMe 3 ) , serving as both bismuth and silicon source. Precursor synthesis, analysis, crystal structure are also reported. forms hexagonal crystals = 10.7110(11) A b A, c 10.2500(7) A; space group P6 . The temperature of was 200-450 °C, where constant growth rate 0.4 per cycle obtained between 250 °C 350 °C. Impurity levels at below 0.2 at.- % 0.1 for carbon hydrogen, respectively. as-deposited amorphous, post-synthetic annealing in an atmosphere N or O 400-1000 applied.
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