Electrical and photoelectrical properties of P3HT/n-Si hybrid organic–inorganic heterojunction solar cells
作者： VV Brus , M Zellmeier , X Zhang , SM Greil , M Gluba
DOI: 10.1016/J.ORGEL.2013.07.021
关键词:
摘要: Abstract A detail analysis of electrical and photoelectrical properties hybrid organic–inorganic heterojunction solar cells poly(3-hexylthiophene) (P3HT)/n-Si, fabricated by spin-coating the polymeric thin film onto oxide passivated Si(1 0 0) surface, was carried out within temperature ranging from 283 to 333 K. The dominating current transport mechanisms were established be multistep tunnel-recombination space charge limited at forward bias leakage through shunt resistance reverse bias. simple approach developed successfully applied for correct high frequency C – V characteristics cells. P3HT/n-Si cell under investigation possessed following photoelectric parameters: J sc = 16.25 mA/cm 2 , oc = 0.456 V, FF = 0.45, η = 3.32% 100 mW/cm AM 1.5 illumination. light dependence is presented quantitatively discussed in detail.
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