Chemical etching orientation of ZnGeP2 single crystals
作者： Jiang Cheng , Shifu Zhu , Beijun Zhao , Baojun Chen , Zhiyu He
DOI: 10.1016/J.JCRYSGRO.2010.11.008
关键词:
摘要: Abstract A chemical etching orientation method is suggested for the ZnGeP 2 crystals. Several polished faces of crystals were etched in a certain solution. Some regular etch pits appeared on all samples. The indices side facets measured by X-ray rocking method, which mainly belong to {2 0 4}, {1 1 2} and {1 1 0}. Then three crystallographic axes determined according angle relationship. Finally, optical parametric oscillator (OPO) devices cut at direction θ =0° φ =53°.
harvard.edu
elsevier.com
sci-hub.se 参考文章(10)
Xin Zhao, Shifu Zhu, Beijun Zhao, Baojun Chen, Zhiyu He, Ruilin Wang, Huiguang Yang, Yongqiang Sun, Jiang Cheng, Growth and characterization of ZnGeP2 single crystals by the modified Bridgman method Journal of Crystal Growth. ,vol. 311, pp. 190- 193 ,(2008) , 10.1016/J.JCRYSGRO.2008.08.065
S. Dhar, B.R. Nag, Etching solutions for the determination of the crystallographic axes of ZnGeP2 Journal of Crystal Growth. ,vol. 43, pp. 120- 122 ,(1978) , 10.1016/0022-0248(78)90376-7
G.A. Verozubova, A.I. Gribenyukov, V.V. Korotkova, O. Semchinova, D. Uffmann, Synthesis and growth of ZnGeP2 crystals for nonlinear optical applications Journal of Crystal Growth. ,vol. 213, pp. 334- 339 ,(2000) , 10.1016/S0022-0248(00)00362-6
Daniel Creeden, Peter A. Ketteridge, Peter A. Budni, Scott D. Setzler, York E. Young, John C. McCarthy, Kevin Zawilski, Peter G. Schunemann, Thomas M. Pollak, Evan P. Chicklis, Min Jiang, Mid-infrared ZnGeP2 parametric oscillator directly pumped by a pulsed 2 microm Tm-doped fiber laser. Optics Letters. ,vol. 33, pp. 315- 317 ,(2008) , 10.1364/OL.33.000315
W. J. Everson, C. K. Ard, J. L. Sepich, B. E. Dean, G. T. Neugebauer, H. F. Schaake, Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxy Journal of Electronic Materials. ,vol. 24, pp. 505- 510 ,(1995) , 10.1007/BF02657954
Kevin T. Zawilski, Peter G. Schunemann, Scott D. Setzler, Thomas M. Pollak, Large aperture single crystal ZnGeP2 for high-energy applications Journal of Crystal Growth. ,vol. 310, pp. 1891- 1896 ,(2008) , 10.1016/J.JCRYSGRO.2007.11.151
Yuri M. Andreev, Pavel P. Geiko, Elena Kotsubinskaya, ZnGeP 2 crystal: applications for visualization or IR signals Tenth Joint International Symposium on Atmospheric and Ocean Optics/Atmospheric Physics. Part II: Laser Sensing and Atmospheric Physics. ,vol. 5397, pp. 173- 180 ,(2004) , 10.1117/12.548593
T.Y. Wang, R. Sivakumar, D.K. Rai, W.T. Hsu, C.W. Lan, A new single step process for synthesis and growth of ZnGeP2 crystal Journal of The Chinese Institute of Chemical Engineers. ,vol. 39, pp. 385- 387 ,(2008) , 10.1016/J.JCICE.2007.12.011
G. Kamler, J. Borysiuk, J. L. Weyher, A. Presz, M. Woźniak, I. Grzegory, Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures European Physical Journal-applied Physics. ,vol. 27, pp. 247- 249 ,(2004) , 10.1051/EPJAP:2004103
G. A. Verozubova, A. I. Gribenyukov, Growth of ZnGeP 2 crystals from melt Crystallography Reports. ,vol. 53, pp. 158- 163 ,(2008) , 10.1134/S1063774508010215