Influence of the pulling rate on the properties of ZnGeP2 crystal grown by vertical Bridgman method
作者： Liang Shen , Dong Wu
DOI: 10.1016/J.JCRYSGRO.2016.04.025
关键词: Crystallography 、 Diffraction 、 Etching (microfabrication) 、 Crystal growth 、 Full width at half maximum 、 Analytical chemistry 、 Spectral line 、 Quality (physics) 、 Etch pit density 、 Materials science 、 Crystal
摘要: Abstract Zinc–germanium diphosphide (ZGP) crystals (15 mm in diameter and 65 mm length) were successfully grown by the modified vertical Bridgman method on seeds at different pulling rates (0.5 mm/h 0.75 mm/h) order to study defect generation during crystal growth. At positions (the onset, middle end) single crystals, their properties of ZGP investigated X-ray diffraction, etching technique optical transmission spectra. The results indicate that increase rate deteriorates quality onset part crystals. etch pit density (EPD) full width half maximum (FWHM) rocking curves increase, while transmittance decreases with increasing rate. However, hardly influences end
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