Vertical Bridgman growth of sapphire—Seed crystal shapes and seeding characteristics
作者： K. Hoshikawa , J. Osada , Y. Saitou , E. Ohba , C. Miyagawa
DOI: 10.1016/J.JCRYSGRO.2014.03.007
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摘要: Abstract The growth of sapphire by the traditional vertical Bridgman (VB) method was studied using various shapes seed crystals and tungsten (W) crucibles shaped to match seeds. Approximately 2-in. diameter, c-axis single were reproducibly grown from three kinds seed: thin, tapered full diameter. Factors relating type single-crystal are discussed, including reproducibility seeding processes, generation elimination low-angle grain boundaries (LAGBs). What learned facilitated subsequent large-diameter, 3-, 4- 6-in., sapphires full-diameter
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