Problems and recent advances in melt crystal growth technology

摘要: Abstract The present review deals with the novel developments in melt growth techniques which have arisen mostly within recent five-ten years and focuses on progress growing bulk crystals of dielectrics, however, many could be easily applied to semiconductor technology. scaling size yield grown from melt, various ways tricks improve crystal perfection via homogenization composition governing heat mass transfer are under consideration. Particular such as low-thermal gradient low-melt level techniques, by field rotation applying low-frequency vibration, well use double crucibles submerged baffles considering. paper also discusses current problems due competition alternative technologies manufacture crystalline or quasi-crystalline materials including transparent ceramics glass-ceramics solid-state single