Evolution of interface configuration in sapphire single crystal growth via Czochralski method
作者： CT Sun , DF Xue , None
DOI: 10.1179/1433075X13Y.0000000102
关键词:
摘要: The evolution of interface configuration during sapphire crystal growth by Czochralski method was studied on the basis chemical bonding conditions at crystal/melt interface. On theory single growth, when grown along c axis direction in system, crystal/metal is composed six crystallographically equivalent {110} interfaces thermodynamically. With rotation process, developed from hexagon to circle due appearance {100} surfaces and {h10} microfacets intersection two adjacent interfaces. (h10) microfacet made (100) (110) planes. Lower densities relative that thermodynamically drive formation round direction.
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