Linear solid state imaging device with trapizoid type photodiodes

摘要: A linear solid state imaging device including a substrate (21), first well (22) of predetermined junction depth, second (23) deeper than the (22), trapezoid type photodiode area (24) linearly arranged in which except for one side parallel sides area, other are surrounded by channel stop (31), pair HCCD areas (25) both and connected to output amplifier, shift gate (28) formed between transferring accumulated charges (26) formed, underneath having six-sided shape is contact with (24), another has V-shaped depression potential barrier formation (27) near top surface poly (29) disposed over transferred from an insulating layer (30) gate, isolates cells each means barrier.