Highly absorbing Cu–In–O thin films for photovoltaic applications
作者： N. Khemiri , F. Chaffar Akkari , M. Kanzari , B. Rezig
DOI: 10.1016/J.TSF.2007.12.070
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摘要: Abstract We report in this paper on the preparation and characterization of improved quality Cu–In–O films for use as a high-efficiency solar cell absorber. Samples were prepared via sequential thermal vacuum deposition Cu In or (at 10 −5 mbar) glass substrates heated at 150°C. After what, obtained binary systems (Cu/In In/Cu) annealed air 400°C 3h. These characterized their structural, electrical optical properties by using X-ray diffraction (XRD), resistivity (transmittance reflectance) measurement techniques. The (XRD) patterns revealed presence CuO 2 O 3 phases. absorption coefficient thin (4.10 5 cm −1 ) is larger than In/Cu case range 4 –10 Cu/In visible spectral range. Direct band gaps 1.40 1.52eV found cases, respectively. complex dielectric constants have been calculated. It was that refractive index dispersion data obeyed Wemple–Di Domenico single oscillator model, from which parameters high-frequency constant determined. electric free carrier susceptibility ratio concentration to effective mass estimated according model Spitzer Fan. measurements show conversion metallic phase semiconductor switching values an annealing temperature 275°C. both cases samples highly compensated.
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