Thickness dependence of magnetic properties of (Ga,Mn)As

摘要: We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn)As upon well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal the ferro- magnetic response. The effect already starts at very beginning process and is accompanied by spin reorientation transition in-plane uniaxial anisotropy. postulate that negative gradient along growth direction self-compensating defects (Mn interstitial) presence surface donor traps gives quantitative account these effects within p-d mean field Zener model with adequate mod- ifications take nonuniform distribution holes Mn cations into account. described here are practical importance for employing thin ultrathin layers or relative compounds concept spintronics devices, like resonant tunneling devices particular.