Normal incidence hole intersubband absorption long wavelength GaAs/AlxGa1−xAs quantum well infrared photodetectors
作者： B. F. Levine , S. D. Gunapala , J. M. Kuo , S. S. Pei , S. Hui
DOI: 10.1063/1.106170
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摘要: The first long wavelength quantum well infrared photodetector based on valence band intersubband absorption holes is demonstrated. A normal incidence efficiency of η=28% and detectivity D*λ=3.1×1010 cm √Hz/W at T=77 K, for a cutoff λc=7.9 μm, have been achieved.
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A. D. Wieck, E. Batke, D. Heitmann, J. P. Kotthaus, Parallel excitation of hole and electron intersubband resonances in space-charge layers on silicon Physical Review B. ,vol. 30, pp. 4653- 4663 ,(1984) , 10.1103/PHYSREVB.30.4653
L. C. West, S. J. Eglash, First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well Applied Physics Letters. ,vol. 46, pp. 1156- 1158 ,(1985) , 10.1063/1.95742
Harald Schneider, Frank Fuchs, Bernhard Dischler, John D. Ralston, Peter Koidl, Intersubband absorption and infrared photodetection at 3.5 and 4.2 μm in GaAs quantum wells Applied Physics Letters. ,vol. 58, pp. 2234- 2236 ,(1991) , 10.1063/1.104936
G. Hasnain, B. F. Levine, S. Gunapala, Naresh Chand, Large photoconductive gain in quantum well infrared photodetectors Applied Physics Letters. ,vol. 57, pp. 608- 610 ,(1990) , 10.1063/1.103612
J. Y. Andersson, L. Lundqvist, Z. F. Paska, Quantum efficiency enhancement of AlGaAs/GaAs quantum well infrared detectors using a waveguide with a grating coupler Applied Physics Letters. ,vol. 58, pp. 2264- 2266 ,(1991) , 10.1063/1.104917
Yia-Chung Chang, R. B. James, Saturation of intersubband transitions in p-type semiconductor quantum wells Physical Review B. ,vol. 39, pp. 12672- 12681 ,(1989) , 10.1103/PHYSREVB.39.12672
A. Pinczuk, D. Heiman, R. Sooryakumar, A.C. Gossard, W. Wiegmann, Spectroscopy of two-dimensional hole gases in GaAs-(AlGa)As heterostructures Surface Science. ,vol. 170, pp. 573- 580 ,(1986) , 10.1016/0039-6028(86)91022-8
K. K. Choi, M. Dutta, P. G. Newman, M.‐L. Saunders, G. J. Iafrate, 10 μm infrared hot‐electron transistors Applied Physics Letters. ,vol. 57, pp. 1348- 1350 ,(1990) , 10.1063/1.103480
Chan‐Lon Yang, Dee‐Son Pan, Robert Somoano, Advantages of an indirect semiconductor quantum well system for infrared detection Journal of Applied Physics. ,vol. 65, pp. 3253- 3258 ,(1989) , 10.1063/1.342679
B. F. Levine, C. G. Bethea, G. Hasnain, V. O. Shen, E. Pelve, R. R. Abbott, S. J. Hsieh, High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors Applied Physics Letters. ,vol. 56, pp. 851- 853 ,(1990) , 10.1063/1.102682