A large-signal GaAs MESFET model implemented on SPICE

摘要: A device model that predicts large-signal GaAs MESFET performance has been implemented on the large-scale circuit simulation program SPICE. The takes into consideration drift velocity saturation, channel length modulation, and subthreshold current effects. In addition, depends primarily physical (i.e. material geometric) rather than empirical parameters. Combined with SPICE program, a general CAD tool is formed which can be used to aid in design of circuits such power amplifiers, oscillators, mixers, fast-switching digital integrated circuits. Model predictions are compared measured performance, limitations this approach discussed.