A large-signal, analytic model for the GaAs MESFET
作者： M.A. Khatibzadeh , R.J. Trew
DOI: 10.1109/22.3510
关键词:
摘要: An analytic, large-signal model for the GaAs MESFET is presented. The device physics-based and describes conduction displacement currents of FET as a function instantaneous terminal voltages their time derivatives. allows arbitrary doping profiles in channel thus suitable optimization ion-implanted buried-channel FETs. It also accounts charge accumulation conducting at high electric fields associated capacitance self-consistent manner. Theoretical predictions are correlated with experimental data on X-band power FETs excellent agreement obtained. >
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