90 nm CMOS RF technology with 9.0 V I/O capability for single-chip radio
作者： G. Baldwin , J. Ai , K. Benaissa , F. Chen , P.R. Chidambaram
DOI: 10.1109/VLSIT.2003.1221099
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摘要: In this article, an industry leading 21 mask count 90nm CMOS SoC technology with integrated RF, analog, dense memory, low power or high-speed logic, and high-voltage DEMOS options is demonstrated. RF analog characteristics high on-chip voltage capability enable single chip radio design as well many additional applications.
sci-hub.se 参考文章(1)
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