Tunable thermal conductivity in aluminum oxide resistive based switching structures by conducting filament diffusion

摘要: Abstract Nanoscale oxide resistive switching structures have attracted widespread attention in connection with future logic, memory, neuromorphic computing, and storage structure applications. Resistive effects are usually assumed to be caused by conducting filaments (CFs), which formed metal diffusion, their breaking across the insulating between electrodes. Understanding thermal transport CF containing metal/oxide based is critical determine whether these exist. This paper reports phonon Cu diffused aluminum (AO) a Cu/AO/Si where CFs locally as result of electric breakdown. was studied measuring cross-plane conductivity on AO layers from 100 500 K. Our results suggest that conferring properties upon non-thermoelectric materials formation enables controlled density. Therefore, proposed methodology, including local probing method, will also help understand other physical future.