Charging and discharging characteristics of a single gold nanoparticle embedded in Al2O3 thin films

摘要: We demonstrate a metal-oxide-semiconductor based nonvolatile memory element structure with single isolated gold nanoparticle (Au-NP) acting as the storage site. The Au-NPs are sandwiched between amorphous Al2O3 thin films, deposited using atomic layer deposition method to form blocking and tunneling layers. current voltage characteristics of fabricated during write/erase cycles obtained conductive mode force microscopy (C-AFM) by probing NP at time. Consecutive sweeps show window in I–V characterization an average ΔV ∼0.9 V reading 1.5 nA, demonstrating presence stored charge Au-NP, which originates from AFM metal-coated probe. results writing erasing operation device charging discharging Au-NP. Moreover, physics is discussed terms electric field enhancement due confinement its effect on conduction mechanisms.