An in situ platform for the investigation of Raman shift in micro-scale silicon structures as a function of mechanical stress and temperature increase

摘要: Raman spectroscopy provides an accurate approach to measure temperature and stress in semiconductors at micro-scale nano-scale. In the present work situ experimentation-based separate a measured room high shift signal into mechanical thermal components when uniaxial compressive load is applied presented. loads were on examined silicon cantilever specimens from 150 °C. The measurements performed as function of strain constant levels. results show that given under level can be expressed summation stress-induced temperature-induced separately. For silicon, caused by inelastic interaction between incident laser vibration crystal lattice, while anharmonic terms vibrational potential energy. Analyses indicate such separation used localized change conductivity semiconductor structures stress.