Delay time in GaAs high-power high-speed photoconductive switching devices
作者： L.Q. Zu , Y. Lu , H. Shen , M. Dutta
DOI: 10.1109/68.219719
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摘要: The delay time between the beginning of optical illumination and onset switching in transient response semi-insulating GaAs high-power high-speed photoconductive devices is discussed. field- laser-energy-dependent absorption coefficient used to explain experimentally observed open-state-field, time. Calculations are shown agree with experimental results. >
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