1T Non-Volatile Memory Design Using Sub-10nm Ferroelectric FETs
作者： Ankit Sharma , Kaushik Roy
关键词:
摘要: In this letter, we propose one-transistor ferroelectric NOR type (Fe-NOR) non-volatile memory based on HfZrOx FETs (FeFETs). The enhanced drain-channel coupling in ultra-short channel FeFETs is utilized to dynamically modulate the window of storage cells, thereby resulting simple erase-, program-, and read-operations. simulation analysis predicts sub-1V program/erase voltages proposed Fe-NOR array and, therefore, presents a significantly lower power alternative conventional FeRAM flash memories.
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