On the development of the goss texture in iron-3% silicon

作者: S. Mishra , C. Därmann , K. Lücke

DOI: 10.1016/0001-6160(84)90161-5

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摘要: Abstract A simple laboratory technique was developed to produce Goss-oriented specimens starting with commercial hot band of Fe-3.3%Si. The evolution microstructure and texture including its throughthickness variation followed through the subsequent stages processing until final secondary recrystallization; underlying mechanisms are discussed. In addition pole figure determination more quantitative sensitive Orientation Distribution Function (ODF) analysis applied. results indicate that structure itself, consisting large recrystallized grains Goss orientation in surface layers, exerts a strong influence on eventual development sharp {011}〈100〉 texture. Shear bands were observed after first stage cold rolling, intermediate anneal, second rolling primary recrystallization, 〈111〉∥ND fibres observed. Through ODF analysis, small number {011}〈 100〉 oriented revealed again predominantly near so by chemical etching many them could be removed. During these “Goss-nuclei” grew at expense all other matrix grains.

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