Field effect in InAs/permalloy hybrid transistors

摘要: We measure the static and dynamic resistance of metal-oxide-semiconductor field-effect transistors with ferromagnetic source drain contacts deposited on InAs at liquid helium elevated temperatures. The field effect is examined as a function applied gate voltage in external magnetic fields plane either parallel or perpendicular to current direction. In configuration exhibits strong evidence for spin-polarized transport via an oscillatory gate-voltage dependence jumps irreversible magnetization reversals electrodes. Furthermore, measurements aligned substrate surface are performed up strengths 14 T investigate properties semiconductor channel, i.e., charge-carrier concentration, electron mobility, weak localization.