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DOI: 10.1016/J.MICROREL.2014.09.008
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摘要: Abstract This paper presents fast test protocols for ageing IGBT modules in power cycling conditions, and a monitoring device that tracks the on-state voltage V CE junction temperature T J of IGBTs during operations. is implemented an bench described previous papers, but which has since been modified to perform tests. The here use thermal variations imposed on by operating under Pulse Width Modulation conditions. reaches maximal values frequencies attainable with given module packaging order optimize duration. measurement monitors throughout needed detect possible degradations wire bonds and/or emitter metallization. requires identifying small (a few dozen mV). In addition, swing amplitude must be adjusted achieve protocol. measuring evolution cycle, carried out means at low current level (100 mA). Experimental results demonstrate flexibility this respect various as well feasibility proposed on-line methods.