Measurement of the transient junction temperature in MOSFET devices under operating conditions.
作者： D. Barlini , M. Ciappa , M. Mermet-Guyennet , W. Fichtner
DOI: 10.1016/J.MICROREL.2007.07.008
关键词: MOSFET 、 Device simulation 、 Power (physics) 、 Junction temperature 、 Engineering 、 Transient (oscillation) 、 Dependency (UML) 、 Turn (geometry) 、 Electrical engineering 、 Measure (physics)
摘要: Abstract The capabilities of three techniques to measure the transient average junction temperature in power MOS devices based on electrical thermo-sensitive parameters are assessed experimentally and by compact device simulation. first two methods make use dependency d I s /d t temperature, while third one exploits turn ON delay device.
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