Wetting problems for coatings on windshields
作者： M. Boström , Bo E. Sernelius
DOI: 10.1016/S0169-4332(98)00682-5
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摘要: Abstract We have calculated the wetting angle as function of doping concentration for water on ITO (In2O3:Sn) and determined critical spreading. The calculation relies dielectric properties doped semiconductor. modelled these properties. For we used experimental optical data temperature dependence surface tension input to modelling. modelling semiconductor is based a model by Penn [D.R. Penn, Phys. Rev. 128 (1962) 2093], extended take into account contribution from free carriers.
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