Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology

摘要: This paper describes multiple field-coupled simulations and device characterization of fully CMOS-MEMS-compatible smart gas sensors. The sensor structure is designated for gas/vapour detection at high temperatures (>300 °C) with low power consumption, sensitivity competent mechanic robustness employing the silicon-on-insulator (SOI) wafer technology, CMOS process micromachining techniques. features micro-heaters using p-type MOSFETs or polysilicon resistors differentially transducing circuits in situ temperature measurement. Physical models 3D electro-thermo-mechanical SOI micro-hotplate induced by Joule, self-heating, stress piezoresistive effects are provided. electro-thermal effect initiates thus affects electronic mechanical characteristics devices temperatures. Experiments on variation micro-heater resistance, thermal imaging, deformation interferometry dynamic response have been presented discussed. full integration automatically temperature-reading ICs demonstrates lowest consumption 57 mW 300 °C fast 10 ms.