High-field transport in semiconductors by transmission formalism
作者： K. Natori
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摘要: High field transport in semiconductor is investigated by the transmission-reflection formalism. One-dimensional Boltzmann equation (BTE) solved, without resorting to relaxation time approximation as well perturbation expansion. In case of elastic scattering energy relaxation, current density proportional square root electric for a wide range field. By inclusion due optical phonon emission, restored proportionality field, and showed tendency saturation high-field. The high-field concluded be ballistic transmission carriers through specific layer located at beginning channel. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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