Calculation model for the optical constants of amorphous semiconductors
作者： Sadao Adachi
DOI: 10.1063/1.349424
关键词:
摘要: We present a phenomenological expression for the calculation of optical constants, refractive index, extinction coefficient, and absorption amorphous (a) semiconductors. Our proposed model requires four parameters, namely Eg (optical energy gap), Ec (high‐energy cutoff), D (nondirect‐transition strength), Γ (damping). The damping parameter is considered to reflect distribution electronic states rather than being consequence disorder broadening. Analyses are presented a‐Si, a‐Ge, a‐GaAs, results in satisfactory agreement with experimental data over entire range photon (1.5–6.0 eV).
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(27)
P. Lautenschlager, M. Garriga, S. Logothetidis, M. Cardona, Interband critical points of GaAs and their temperature dependence. Physical Review B. ,vol. 35, pp. 9174- 9189 ,(1987) , 10.1103/PHYSREVB.35.9174
P Lautenschlager, Miquel Garriga, L Vina, Manuel Cardona, None, Temperature dependence of the dielectric function and interband critical points in silicon Physical Review B. ,vol. 36, pp. 4821- 4830 ,(1987) , 10.1103/PHYSREVB.36.4821
Sadao Adachi, Optical dispersion relations for Si and Ge Journal of Applied Physics. ,vol. 66, pp. 3224- 3231 ,(1989) , 10.1063/1.344140
L. Viña, S. Logothetidis, M. Cardona, Temperature dependence of the dielectric function of germanium Physical Review B. ,vol. 30, pp. 1979- 1991 ,(1984) , 10.1103/PHYSREVB.30.1979
D. Ewald, M. Milleville, G. Weiser, Optical spectra of glow-discharge-deposited silicon Philosophical Magazine Part B. ,vol. 40, pp. 291- 303 ,(1979) , 10.1080/01418637908227168
B. G. Bagley, D. E. Aspnes, A. C. Adams, C. J. Mogab, Optical properties of low‐pressure chemically vapor deposited silicon over the energy range 3.0–6.0 eV Applied Physics Letters. ,vol. 38, pp. 56- 58 ,(1981) , 10.1063/1.92131
M. Erman, J. B. Theeten, P. Chambon, S. M. Kelso, D. E. Aspnes, Optical properties and damage analysis of GaAs single crystals partly amorphized by ion implantation Journal of Applied Physics. ,vol. 56, pp. 2664- 2671 ,(1984) , 10.1063/1.333785
R. W. Collins, A. H. Clark, S. Guha, C.‐Y. Huang, An ellipsometry study of a hydrogenated amorphous silicon based n‐i structure Journal of Applied Physics. ,vol. 57, pp. 4566- 4571 ,(1985) , 10.1063/1.335361
G.A.N. Connell, R.J. Temkin, W. Paul, Amorphous germanium III. Optical properties Advances in Physics. ,vol. 22, pp. 643- 665 ,(1973) , 10.1080/00018737300101359
D. E. Aspnes, A. A. Studna, E. Kinsbron, Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eV Physical Review B. ,vol. 29, pp. 768- 779 ,(1984) , 10.1103/PHYSREVB.29.768