Photoluminescence and Steady-State Interband Photoconductivity of High-Purity β-Rhombohedral Boron

摘要: Abstract Photoluminescence and interband photoconductivity of high-purity β-rhombohedral boron were measured at different temperatures up to steady-state conditions. To consistently describe the results in relation one another with respect previous results, energy band scheme was improved. An essential improvement is replacement previously called “upper valence band” by two closely neighbored levels S1 S2 localized states. According proved correlation between structural defects electronic properties they are attributed vacancies structure, probably preferably B(13) sites. The photoluminescence yields positions unoccupied gap states, those prerequisites for interpretation nonradiating cascade-like recombination electrons via series intrinsic trapping levels. Depending on temperature this path competition radiating related transition into defect near edge. luminescence intensity decreases increasing time only partly recovers even long dark periods.