Correlation between structural defects and electronic properties of icosahedral boron-rich solids
作者： R Schmechel , H Werheit
DOI: 10.1088/0953-8984/11/35/316
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摘要: … state reduces the valence band states by one. To compensate the electron deficiency of one per unit cell by antisite defects… well defined defect sites leading to a corresponding variety of …
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