Time dependent electrical resistance of Bi2(Te0.4Se0.6)3 thin films in vacuum and on exposure to atmosphere

摘要: Abstract Thin films of different thicknesses have been vacuum (2×10 −5  torr) deposited by the flash evaporation technique onto glass plates held at room temperature. In situ measurement electrical resistance in as a function time was carried out until stabilized. Then, on exposure to air controlled admittance into chamber, it found that increased pressure increased. After admitted up atmospheric pressure, also increase atmosphere. Also, observed film during re-evacuation does not retrace previous path and thus variation is reversible. The taking place with attributed coalescence process. agglomeration rates for were obtained from linear behavior ln( R / 0 ) vs plot. oxygen adsorption. It annealed are less influenced compared as-grown films. Adsorption takes external internal surfaces be ESR active. Structural analysis using XRD TEM techniques.