Analysis of FIB‐induced damage by electron channelling contrast imaging in the SEM
DOI: 10.1111/JMI.12462
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摘要: We have investigated the Ga+ ion-damage effect induced by focused ion beam (FIB) milling in a [001] single crystal of 316 L stainless steel electron channelling contrast imaging (ECCI) technique. The influence FIB on characteristic surface dislocations was analysed. ECCI approach provides sound estimation damage depth produced milling. For comparison purposes, we also studied same milled conventional backscatter diffraction (EBSD) approach. observe that further insight into phenomenon than EBSD technique direct artefacts scanning microscope. envisage may be convenient tool to optimize settings applications where defect content is relevant.
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