Enhancement of copper line reliability using thin ALD tan film to cap the copper line
作者： Ling Chen , Mei Chang
DOI:
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摘要: A method for depositing a cap layer over metal-containing interconnect is provided. In one aspect, the formed by introducing pulse of compound followed nitrogen-containing compound. comprises tantalum nitride. The provides good barrier and adhesive properties, thereby enhancing electrical performance reliability interconnect.
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