Atomic and electronic structure of Si dangling bonds in quasi-free-standing monolayer graphene

摘要: Si dangling bonds without H termination at the interface of quasi-free standing monolayer graphene (QFMLG) are known scattering centers that can severely affect carrier mobility. In this report, we study atomic and electronic structure in QFMLG using low-temperature scanning tunneling microscopy/spectroscopy (STM/STS), force microscopy (AFM), density functional theory (DFT) calculations. Two types defects with different contrast were observed on a flat terrace by STM AFM. Their varies bias voltage. STS, they showed characteristic peaks energies, 1.1 1.4 eV. Comparison DFT calculations indicates correspond to clusters 3 4 bonds, respectively. The relevance these results for optimization synthesis is discussed.