Quasi free-standing epitaxial graphene fabrication on 3C-SiC/Si(111)
作者： Mojtaba Amjadipour , Anton Tadich , John J Boeckl , Josh Lipton-Duffin , Jennifer MacLeod
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摘要: Growing graphene on SiC thin films Si is a cheaper alternative to the growth bulk SiC, and for this reason it has been recently intensively investigated. Here we study effect of hydrogen intercalation epitaxial obtained by high temperature annealing 3C–SiC/Si(111) in ultra-high vacuum. By using combination core-level photoelectron spectroscopy, low energy electron diffraction, near-edge x-ray absorption fine structure (NEXAFS) find that saturates atoms at topmost layer substrate, leading free-standing 3C–SiC/Si(111). The intercalated fully desorbs after heating sample 850 °C buffer appears again, similar what reported SiC. However, NEXAFS analysis sheds new light intercalation, showing an improvement graphene's flatness atomic H 600 °C. These results provide insight into fabrication SiC/Si films.
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