作者: Rizwan U. A. Khan , Donal D. C. Bradley , Matthew A. Webster , James L. Auld , Alison B. Walker
DOI: 10.1063/1.1645982
关键词:
摘要: We report studies of the evolution hole injection and transport characteristics fluorene-based polymer diodes subjected to electrical stressing. Dark (DI) transient measurements show that polyethylenedioxythiophene/polystyrenesulphonate (PEDOT:PSS)-topolymer contact is initially ohmic, but as stressing proceeds, transients shift longer times lose their characteristic temporal profile. A comparison with time-of-flight photocurrent led us conclude DI modified by a loss ohmic injection. Electroabsorption drastic reduction in built-in potential from 1.4 V 0.6 V. Device simulation shows this be consistent change PEDOT:PSS work function, introduction an interfacial resistance at PEDOT:PSS-to-polymer contact.