作者: S Bala Kumar , S G Tan , M B A Jalil , G-C Liang
DOI: 10.1088/0957-4484/20/36/365204
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摘要: We proposed that a viable form of spin current transistor is one to be made from single-mode device which passes electrons through series magnetic-electric barriers built into the device. The assume wavy spatial profile across conduction path due inevitable broadening magnetic fields. Field results in linearly increasing vector potential channel, increases polarization. have identified important factors for generating high polarization and conductance modulation are low source-drain bias, broadened fields, number FM gates within fixed channel length.