Conduction on localized states in Nb/Al2O3 semiconducting films

作者: A. Devenyi , R. Mǎnǎilǎ

DOI: 10.1016/0022-3093(76)90018-1

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摘要: Abstract Electrical conduction in co-evaporated semiconducting Nb/Al2O3 films (1: 1 volume ratio) is determined by the high density of localized levels energy gap alumina. The tunnelling between metal particles occurs via a hopping mechanism on these states. transitions have an activation order kT, due to continuous distribution levels. conductivity dependence temperature ohmic range leads states times mobility product increasing exponentially above Fermi level. current-field high-field regime gives information about states, which inferred increase linearly with

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