Method of forming a gate pattern in a semiconductor device
作者： Jeong-Yel Jang , Sung-Ho Kwak
DOI:
关键词:
摘要: A gate pattern having a critical dimension after an etching process of 60-70 nm may be formed using ArF photoresist as mask by method including sequentially forming oxide layer, electrode anti-reflection coating and layer on semiconductor wafer; exposing developing the layer; mask; removing during over-etching remaining layer.
lens.org 参考文章(7)
Hiraku Chakihara, Akio Nishida, Masahiro Tadokoro, Mitsuhiro Noguchi, Naonori Wada, Method of manufacturing a semiconductor integrated circuit device ,(2004)
Gurtej S. Sandhu, Jingyi Bai, Shuang Meng, Multiple deposition for integration of spacers in pitch multiplication process ,(2005)
Tae-Woo Jung, Min-Suk Lee, Sung-Kwon Lee, Method for fabricating semiconductor device with fine patterns ,(2003)
Jung-Hyeon Lee, Si-hyeung Lee, Methods for forming resist pattern and fabricating semiconductor device using Si-containing water-soluble polymer ,(2003)
Sung-Kwon Lee, Method for fabricating semiconductor device capable of improving gap-fill property ,(2003)
Jae-Seon Yu, Method for forming contact by using ArF lithography ,(2002)