Method for fabricating semiconductor device using ArF photolithography capable of protecting tapered profile of hard mask
作者： Sung-Kwon Lee
DOI:
关键词: Photoresist 、 Photolithography 、 Etching (microfabrication) 、 Optics 、 Optoelectronics 、 Semiconductor device 、 Hard mask 、 Light source 、 Layer (electronics) 、 Materials science
摘要: A method for fabricating a conducting layer pattern using hard mask of which upper surface is flattened by the use ArF exposure light source. The includes steps of: forming on semiconductor substrate; first layer, second and third in order; photoresist an source order to form predetermined pattern; etching as mask; removing stacked having patterns, whereby spire-shaped removed from pattern.
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