Method of forming metal interconnection layer of semiconductor device

摘要: Various methods are provided for forming metal interconnection layers of semiconductor devices. One exemplary method a layer device includes an interlayer dielectric on substrate, hard mask the layer, wherein serves as anti-reflection depositing and patterning first photoresist to form pattern partial via hole in by etching using mask, removing pattern, second fill with material that defines trench area which overlaps at least portion hole, completely extend full filling conductive material.