Method of depositing amorphus aluminium oxynitride layer by reactive sputtering of an aluminium target in a nitrogen/oxygen atmosphere

作者: Anthony Paul Wilby

DOI:

关键词:

摘要: This invention relates to a method of depositing an amorphous layer AION. The includes providing aluminium sputter target in the chamber; exposing and chamber O2 saturate exposed surfaces with oxygen; introducing substrate into atmosphere containing at least nitrogen sputtering oxygen deposit AION film.

参考文章(11)
N.J Ianno, H Enshashy, R.O Dillon, Aluminum oxynitride coatings for oxidation resistance of epoxy films Surface and Coatings Technology. ,vol. 155, pp. 130- 135 ,(2002) , 10.1016/S0257-8972(02)00051-8
Wang Dehuang, Guo Liang, An aluminum oxynitride film Thin Solid Films. ,vol. 198, pp. 207- 210 ,(1991) , 10.1016/0040-6090(91)90339-Y
M.M. Waite, S. Ismat Shah, Target poisoning during reactive sputtering of silicon with oxygen and nitrogen Materials Science and Engineering: B. ,vol. 140, pp. 64- 68 ,(2007) , 10.1016/J.MSEB.2007.04.001
Scott R. Summerfelt, Sanjeev Aggarwal, Stevan G. Hunter, One step deposition process for the top electrode and hardmask in a ferroelectric memory cell ,(2002)
Christopher J. Zins, Barrett E. Cole, Ion beam sputter deposition process ,(2001)
Il-Goo Kim, Sang-rok Hah, Kyoung-Woo Lee, Sae-il Son, Method of forming metal interconnection layer of semiconductor device ,(2004)