An aluminum oxynitride film
作者： Wang Dehuang , Guo Liang
DOI: 10.1016/0040-6090(91)90339-Y
关键词: Materials science 、 Integrated circuit 、 Fabrication 、 Controlled atmosphere 、 Optoelectronics 、 Sputtering 、 Refractive index 、 Inorganic compound 、 Thin film 、 Breakdown voltage 、 Mineralogy
摘要: Abstract We report on an aluminum oxynitride (AlON) film which was successfully made using the reactive r.f. sputtering method in N 2 O mixture. The fabrication process, atomic components, breakdown field and refractive index of AlON are shown detail. is a new polyfilm combining good properties Al O 3 AlN, it very interesting with regard to optoelectric devices integrated optic circuits.
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