Ultrafast 1.55 μm all‐optical switching using low‐temperature‐grown multiple quantum wells

摘要: Low‐temperature grown surface‐reflection all‐optical switching has been demonstrated with ultrafast photoresponse (1.5 ps), low energy (2 pJ), high‐contrast (13 dB), polarization independence, and wide operation wavelength range in the 1.55 μm band using low‐temperature‐grown Be‐doped strained InGaAs/InAlAs multiple quantum wells. The combination of low‐temperature growth Be‐doping contributes to photoresponse. Additionally, introduction compressive strain a mirror 1% reflectivity greatly enhances optical nonlinearities.