Annealing of low-temperature grown semiconductors: material optimization for ultrafast all-optical gating

摘要: Summary form only given. Ultrafast all-optical gating with compact semiconductor devices requires materials high absorption modulation, sub-picosecond response times, and low in the fully saturated state (low nonsaturable losses). For first time, we correlate time strength of modulation as-grown annealed LT-GaAs. The is very weak LT-GaAs times. We demonstrate that annealing substantially increases preserves a fast, subpicosecond response, yielding superior material for ultrafast gating. A qualitative model presented which relates properties to defect structure defect-related optical transitions Based on this model, guidelines are obtained controlled engineering non-stoichiometric semiconductors applications nonlinear optics.