Design of deep-nanometer-scale capacitors and associated materials challenges

摘要: The International Technology Roadmap for Semiconductors (ITRS) projects that the spatial resolution of features in integrated circuits will eventually be well at nanoscopic dimensions. As a result, there is, presently, an active interest design nano-scale circuit elements such as transistors, resistors, and “capacitors”. with all elements, materials fabrication capacitors are important factor. We analyse these requirements engineering capacitors, show that, deep-nanometer-scales, dielectric properties constant, strength, relaxation determine practicality capacitors. These properties, turn, closely linked to structure, purity, method fabrication, dimensions capacitor components materials.