The preparation and characterization of nearly hysteresis‐free metal‐nitride‐silicon capacitors on both p‐ and n‐type silicon substrates

摘要: The hysteresis in metal‐nitride‐silicon (MNS) capacitors can be reduced to nearly zero by using nitrogen‐rich silicon nitride as the gate dielectric and treating substrate an ammonia plasma before deposition. However, treatment step also causes increase interface state density, especially middle of band gap. Without treatment, virgin flat‐band voltage V*FB is always negative. With shifted from a negative value for MNS on n‐type silicon, whereas will more p‐type silicon. These effects explained postulating that states generated are amphoteric defects similar Pb centers at oxide/silicon metal‐oxide‐silicon capacitors.