作者: Mitsutoshi Takahashi , Masahiko Maeda , Yutaka Sakakibara
DOI: 10.1143/JJAP.26.1606
关键词:
摘要: The hydrogen concentrations of PCVD silicon nitride films were measured by Elastic Recoil Detection (ERD) analysis using 2.5 MeV He+ ions. For annealed films, H ERD are smaller than those an infrared absorption analysis. These results indicate that cross sections Si-hydrogen and N-hydrogen bonds changed annealing.